CMLM0305T multi discrete module ? surface mount n-channel mosfet and low v f silicon schottky diode description: the central semiconductor CMLM0305T is a multi discrete module? consisting of a single n-channel enhancement-mode mosfet and a low v f schottky diode packaged in a space saving picomini? sot-563 surface mount case. this device is designed for small signal general purpose applications where size and operational efficiency are prime requirements. maximum ratings - case: (t a =25c) symbol units power dissipation (note 1) p d 350 mw power dissipation (note 2) p d 300 mw power dissipation (note 3) p d 150 mw operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 357 c/w maximum ratings - q1: (t a =25c) symbol units drain-source voltage v ds 50 v drain-gate voltage v dg 50 v gate-source voltage v gs 12 v continuous drain current i d 280 ma maximum pulsed drain current i dm 1.5 a maximum ratings - d1: (t a =25c) symbol units peak repetitive reverse voltage v rrm 40 v continuous forward current i f 500 ma peak repetitive forward current, tp 1.0ms i frm 3.5 a peak forward surge current, tp = 8.0ms i fsm 10 a electrical characteristics - q1: (t a =25c unless otherwise noted) symbol test conditions min max units i gssf, i gssr v gs =5.0v 50 na i gssf, i gssr v gs =10v 0.5 a i gssf, i gssr v gs =12v 1.0 a i dss v ds =50v, v gs =0 50 na bv dss v gs =0, i d =10a 50 v v gs(th) v ds =v gs , i d =250a 0.75 1.2 v applications: ? dc / dc converters ? battery powered portable equipment notes: (1) ceramic or aluminum core pc board with copper mounting pad area of 4.0mm 2 (2) fr-4 epoxy pc board with copper mounting pad area of 4.0mm 2 (3) fr-4 epoxy pc board with copper mounting pad area of 1.4mm 2 * device is halogen free by design marking code: c35 features: ? esd protection up to 2kv ? low r ds(on) transistor (1.5 max @ v gs =5.0v) ? low v f schottky diode (0.47v max @ 0.5a) sot-563 case r2 (18-january 2010) www.centralsemi.com
CMLM0305T multi discrete module ? surface mount n-channel mosfet and low v f silicon schottky diode electrical characteristics - q1 - continued: symbol test conditions min typ max units v sd v gs =0, i s =115ma 1.4 v r ds(on) v gs =1.8v, i d =50ma 1.6 2.3 r ds(on) v gs =2.5v, i d =50ma 1.3 1.9 r ds(on) v gs =5.0v, i d =50ma 1.1 1.5 g fs v ds =10v, i d =200ma 200 ms c rss v ds =25v, v gs =0, f=1.0mhz 5.0 pf c iss v ds =25v, v gs =0, f=1.0mhz 50 pf c oss v ds =25v, v gs =0, f=1.0mhz 25 pf electrical characteristics - d1: (t a =25c) i r v r =10v 20 a i r v r =30v 100 a bv r i r =500a 40 v v f i f =100a 0.13 v v f i f =1.0ma 0.21 v v f i f =10ma 0.27 v v f i f =100ma 0.35 v v f i f =500ma 0.47 v c t v r =1.0v, f=1.0mhz 50 pf lead code: 1) gate q1 2) source q1 3) cathode d1 4) anode d1 5) anode d1 6) drain q1 marking code: c35 sot-563 case - mechanical outline www.centralsemi.com r2 (18-january 2010)
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